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SILICON CARBIDE NOZZLES
PRODUCTION AREA
Reaction Bonded Silicon / SISIC properties
 
Density            : 3.07 to 3.15 gm/cm3
High hardness           : HV10 ≥ 2,200 GPa
High Young’s modulus   : 380 to 430 MPa
High thermal conductivity : 120 to 200 W/mK
Porosity : Zero (0) gm/cc
 
Low coefficient of linear expansion : 3.6 to 4.1x10-6/K at 20 to 400°C
 
Maximum operating temp of in inert gas  : 1,800°Celcius
 
Excellent thermal shock resistance  : ΔT 1,100 Kelvin
 
Corrosion and wear resistant at high temp.
High Mirror surface
Structural integrity even at high temperature.

Download : Technical data SIC.pdf