Reaction Bonded Silicon / SISIC
: 3.07 to 3.15 gm/cm3
: HV10 ≥ 2,200 GPa
High Young’s modulus : 380 to 430 MPa
High thermal conductivity : 120 to 200 W/mK
: Zero (0) gm/cc
Low coefficient of linear expansion : 3.6 to 4.1x10-6/K
at 20 to 400°C
Maximum operating temp of in inert gas :
Excellent thermal shock resistance : ΔT
Corrosion and wear resistant at high temp.
High Mirror surface
Structural integrity even at high temperature.
Technical data SIC.pdf