Reaction Bonded Silicon / SISIC properties

Density : 3.07 to 3.15 gm/cm³

High hardness : HV10 ≥ 2,200 GPa

High Young’s modulus : 380 to 430 MPa

High thermal conductivity : 120 to 200 W/mK

Porosity : Zero (0) gm/cc

Low coefficient of linear expansion : 3.6 to 4.1x10^-6/K at 20 to 400°C

Maximum operating temp of in inert gas : 1,800°Celcius

Excellent thermal shock resistance : ΔT 1,100 Kelvin

Corrosion and wear resistant at high temp.

High Mirror surface

Structural integrity even at high temperature.